EEWORLDEEWORLDEEWORLD

Part Number

Search
Datasheet >

FGY40T120SMD

Among 2 related components, FGY40T120SMD have related pdf.
Part Number Manufacturer Description Datasheet
FGY40T120SMD ON Semiconductor IGBT 1200V 80A TO-247 Download
FGY40T120SMD Fairchild MOSFET 650V N-Channel SuperFET III MOSFET Download
FGY40T120SMD parameters:

Description

IGBT 1200V 80A TO-247

Parametric
Parameter NameAttribute value
IGBT typeTrench type field cutoff
Voltage - collector-emitter breakdown (maximum)1200V
Current - Collector (Ic) (Maximum)80A
Pulse current - collector (Icm)160A
Vce(on) when different Vge,Ic2.4V @ 15V,40A
Power - Max882W
switching energy2.7mJ (on), 1.1mJ (off)
input typestandard
gate charge370nC
Td (on/off) value at 25°C40ns/475ns
Test Conditions600V, 40A, 10 ohms, 15V
Reverse recovery time (trr)65ns
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Package/casingTO-247-3
Supplier device packagingTO-247

Technical ResourceMore

ForumMore

Technical VideoMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Search Index   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Index   0I 0Y 4E 7W 98 9U AP CK I1 JS LB QE TD XX YF

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号