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FDD3682_F085

Among 2 related components, FDD3682_F085 have related pdf.
Part Number Manufacturer Description Datasheet
FDD3682_F085 Fairchild 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
FDD3682-F085 ON Semiconductor MOSFET N-Channel PwrTrench Download
FDD3682_F085 parameters:

Description

MOSFET N-Channel PwrTrench

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor(安森美)
package instructionSMALL OUTLINE, R-PSSO-G2
Manufacturer packaging code369AS
Reach Compliance Codenot_compliant
Avalanche Energy Efficiency Rating (Eas)55 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)32 A
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance0.036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)95 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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