Part Number |
DMN601K |
DMN601K_08 |
Description |
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
Number of terminals |
3 |
3 |
Minimum breakdown voltage |
60 V |
60 V |
Processing package description |
GREEN, PLASTIC PACKAGE-3 |
GREEN, PLASTIC PACKAGE-3 |
Lead-free |
Yes |
Yes |
EU RoHS regulations |
Yes |
Yes |
China RoHS regulations |
Yes |
Yes |
state |
ACTIVE |
ACTIVE |
packaging shape |
RECTANGULAR |
RECTANGULAR |
Package Size |
SMALL OUTLINE |
SMALL OUTLINE |
surface mount |
Yes |
Yes |
Terminal form |
GULL WING |
GULL WING |
terminal coating |
MATTE TIN |
MATTE TIN |
Terminal location |
DUAL |
DUAL |
Packaging Materials |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
structure |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Number of components |
1 |
1 |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
Channel type |
N-CHANNEL |
N-CHANNEL |
field effect transistor technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
operating mode |
ENHANCEMENT |
ENHANCEMENT |
Transistor type |
GENERAL PURPOSE SMALL SIGNAL |
GENERAL PURPOSE SMALL SIGNAL |
Maximum leakage current |
0.3000 A |
0.3000 A |
feedback capacitor |
5 pF |
5 pF |
Maximum drain on-resistance |
2 ohm |
2 ohm |