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DMN601K

Showing 4 Results for DMN601K, including DMN601K,DMN601K_08, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
DMN601K Diodes 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
DMN601K_08 Diodes 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
DMN601K_15 Diodes N-CHANNEL ENHANCEMENT MODE MOSFET Download
DMN601K-7 Diodes Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 300mA Gate-source threshold voltage: 2.5V @ 1mA Drain-source on-resistance: 2Ω @ 500mA, 10V Maximum power dissipation (Ta =25°C): 350mW Type: N-channel Download
DMN601K Related Product Datasheets:
Part Number Datasheet
DMN601K 、 DMN601K_08 Download Datasheet
DMN601K_15 Download Datasheet
DMN601K-7 Download Datasheet
DMN601K Related Products:
Part Number DMN601K DMN601K_08
Description 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 3 3
Minimum breakdown voltage 60 V 60 V
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Channel type N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current 0.3000 A 0.3000 A
feedback capacitor 5 pF 5 pF
Maximum drain on-resistance 2 ohm 2 ohm

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