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CY7C25702KV18-500BZXC

Among 1 related components, CY7C25702KV18-500BZXC have related pdf.
Part Number Manufacturer Description Datasheet
CY7C25702KV18-500BZXC Cypress Semiconductor SRAM 72MB (2Mx36) 1.8v 500MHz DDR II SRAM Download
CY7C25702KV18-500BZXC parameters:

Description

SRAM 72MB (2Mx36) 1.8v 500MHz DDR II SRAM

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress(赛普拉斯)
Parts packaging codeBGA
package instructionLBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Factory Lead Time1 week
Maximum access time0.45 ns
Maximum clock frequency (fCLK)500 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density75497472 bit
Memory IC TypeDDR SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum standby current0.36 A
Minimum standby current1.7 V
Maximum slew rate0.89 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width13 mm
Base Number Matches1

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