Parameter Name | Attribute value |
FET type | N channel |
technology | SiCFET (silicon carbide) |
Drain-source voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) at 25°C | 90A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) | 20V |
Rds On (maximum value) when different Id, Vgs | 34 milliohms @ 50A, 20V |
Vgs (th) (maximum value) when different Id | 2.4V @ 10mA |
Gate charge (Qg) at different Vgs (maximum value) | 161nC @ 20V |
Vgs (maximum value) | +25V,-10V |
Input capacitance (Ciss) at different Vds (maximum value) | 2788pF @ 1000V |
FET function | - |
Power dissipation (maximum) | 463W(Tc) |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | Through hole |
Supplier device packaging | TO-247-3 |
Package/casing | TO-247-3 |