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BAS16DXV6T1

Among 3 related components, BAS16DXV6T1 have related pdf.
Part Number Manufacturer Description Datasheet
BAS16DXV6T1 ON Semiconductor Diodes - General Purpose, Power, Switching 75V 200mA Download
BAS16DXV6T1_10 ON Semiconductor Dual Switching Diode Download
BAS16DXV6T1G ON Semiconductor Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 200mA, trr=6ns, VF=1.25 V@150mA Download
BAS16DXV6T1 parameters:

Description

Diodes - General Purpose, Power, Switching 75V 200mA

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor(安森美)
package instructionPLASTIC, CASE 463A-01, 6 PIN
Contacts6
Manufacturer packaging code463A-01
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current50 µA
Maximum reverse recovery time0.006 µs
Reverse test voltage75 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40

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