Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Microsemi |
package instruction | FLANGE MOUNT, R-PUFM-X2 |
Contacts | 2 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Other features | AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) | 3200 mJ |
Shell connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 1000 V |
Maximum drain current (ID) | 215 A |
Maximum drain-source on-resistance | 0.052 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PUFM-X2 |
JESD-609 code | e1 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 860 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN SILVER COPPER |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |