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APTM100UM45FAG

Among 1 related components, APTM100UM45FAG have related pdf.
Part Number Manufacturer Description Datasheet
APTM100UM45FAG Microsemi 215 A, 1000 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET Download
APTM100UM45FAG parameters:

Description

215 A, 1000 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET

Parametric
Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionFLANGE MOUNT, R-PUFM-X2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)3200 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)215 A
Maximum drain-source on-resistance0.052 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PUFM-X2
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)860 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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