Parameter Name | Attribute value |
FET type | N channel |
technology | MOSFET (metal oxide) |
Drain-source voltage (Vdss) | 30V |
Current - Continuous Drain (Id) at 25°C | 20A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) | 4.5V,10V |
Rds On (maximum value) when different Id, Vgs | 4.6 milliohms @ 20A, 10V |
Vgs (th) (maximum value) when different Id | 2.4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 95nC @ 10V |
Vgs (maximum value) | ±12V |
Input capacitance (Ciss) at different Vds (maximum value) | 5185pF @ 15V |
FET function | Schottky diode (body) |
Power dissipation (maximum) | 3.1W(Ta) |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | surface mount |
Supplier device packaging | 8-SOIC |
Package/casing | 8-SOIC (0.154", 3.90mm wide) |