US1M-W datasheet, PDF - EEWORLD Datasheet

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US1M-W: DescriptionDC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.7V @ 1A Reverse recovery time (trr): 75ns 1A, 1000V; CategoryDiscrete semiconductor Super fast recovery diode; File Size521KB，3 Pages; ManufacturerFORMOSAMS; Websitehttp://www.formosagr.com/; FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.

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US1M-W Overview

DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.7V @ 1A Reverse recovery time (trr): 75ns 1A, 1000V

US1M-W Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	1kV
Average rectified current (Io)	1A
Forward voltage drop (Vf)	1.7V @ 1A
Reverse recovery time (trr)	75ns

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