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US1GG

Description
DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V @ 1A Reverse recovery time (trr): 50ns
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size599KB,3 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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US1GG Overview

DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V @ 1A Reverse recovery time (trr): 50ns

US1GG Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)400V
Average rectified current (Io)1A
Forward voltage drop (Vf)1.3V @ 1A
Reverse recovery time (trr)50ns

US1GG Preview

Download Datasheet
US1AG
THRU
US1MG
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
SURFACE MOUNT
ULTRA
FAST RECTIFIER
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
0.067 (1.70)
0.051 (1.30)
DO-214AC/SMA
0.110(2.80)
0.094(2.40)
High forward surge current capability
High temperature soldering guaranteed
250 °C/10 seconds at terminals
0.096(2.42)
0.078(1.98)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
Mechanical Data
Case
: JEDEC DO-214AC/SMA Molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity
: Polarity symbol marking on body
Mounting Position
: Any
Weight
: 0.002 ounce, 0.055 grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.208(5.30)
0.188(4.80)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
SYMBOLS
US1AG US1BG US1DG US1GG US1JG US1KG US1MG
MDD
US1A
MDD
US1B
MDD
US1D
MDD
US1G
MDD
US1J
MDD
US1K
MDD
US1M
Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=55
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DCblocking voltage
Maximum reverse recovery time
T
A
=25℃
T
A
=125℃
(NOTE 1)
V
RMM
V
RMS
V
DC
I
(AV)
UNITS
V
V
V
A
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
trr
30
1.0
1.30
5.0
50.0
50
15.0
75.0
-55 to +150
1.65
A
V
μA
75
ns
pF
℃/W
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
C
J
R
JA
T
J
,
T
STG
Note:1.Reverse
recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.The
typical data above is for reference only.
DN:T19704A0
https://www.microdiode.com
Rev:2019A0
Page :1
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