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UF4004

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size98KB,2 Pages
ManufacturerNanjing International Group Co.,Ltd
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SIGNAL DIODE

信号二极管

UF4004 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode

UF4004 Preview

Download Datasheet
UF4001
THRU
UF4007
1.0 AMP HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* High speed switching
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
* Both normal and Pb free product are available:
* Normal:80~95%Sn,5~20%Pb
* Pb free:99 Sn above can meet Rohs enviroment substance
directive request
.205(5.2)
.166(4.2)
.031(.8)
.023(.6)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=50 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range Tj, TSTG
NOTES:
UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.3
5.0
150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
uA
nS
pF
C
1.0
1.70
50
20
-65 +150
70
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
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