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UF3A_05

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size418KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB

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DATA SHEET
UF3A~UF3M
SURFACE MOUNT ULTRAFAST RECTIFIER
50 to 1000 Volts
VOLTAGE
3.0 Amperes
CURRENT
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Ultrafast recovery times for high efficiency
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Glass passivated junction
• Pb free product are available : 99% Sn can meet Rohs environment
substance directive request
SMC/DO-214AB
Unit: inch (mm)
.128(3.25)
.108(2.75)
.280(7.11)
.260(6.60)
.012(.305)
.006(.152)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 16mm tape (EIA-481)
Weight: 0.007 ounce, 0.21 gram
.050(1.27)
.030(0.76)
.320(8.13)
.305(7.75)
.103(2.62)
.079(2.00)
.008(.203)
.002(.051)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
L
= 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A
M a xi m um D C R e ve r s e C ur r e nt a t T
A
= 2 5
O
C
R a t e d D C B l o c k i ng V o l t a g e T
A
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 3 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B OL
V
RRM
V
RMS
V
DC
I
AV
I
F S M
V
F
1 .0
UF 3 A
50
35
50
UF 3 B
100
70
100
UF 3 D
200
140
200
UF 3 G
400
280
400
3 .0
100
1 .4
1 0 .0
300
75
15
50
- 5 0 TO + 1 5 0
100
63
O
.245(6.22)
.220(5.59)
UF 3 J
600
420
600
UF 3 K
800
560
800
UF 3 M
1000
700
1000
U N IT S
V
V
V
A
A
1 .7
V
I
R
uA
C
J
Rθ J L
T
RR
T
J
, T
S TG
pF
C / W
ns
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
REV.0-MAR.22.2005
PAGE . 1
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