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UF2001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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UF2001 Overview

Rectifier Diode

UF2001 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Base Number Matches1

UF2001 Preview

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HER201/UF2001 THRU HER208/UF2007
2.0 AMPS. HIGH EFFICIENT
RECTIFIERS
Voltage Range
50 to 1000 Volts
Current
2.0 Amperes
DO-15
Features
*
Low forward voltage drop
*
High current capability
*
High reliability
*
High surge current capability
1.0(25.4)
MIN.
Mechanical Data
*
Cases:Molded plastic
*
Epoxy:UL 94V-O rate flame retardant
*
Lead:Axial leads,solderable per MIL-
.140(3.6)
.104(2.6)
DIA.
.300(7.6)
.230(5.8)
STD-202,Method 208 guaranteed
*
Polarity:Color band denotes cathode end
*
High temperature soldering guaranteed:
250
0
C/10 seconds/.375",(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
*
Weight:0.40 grams
1.0(25.4)
MIN.
.034(.9)
.028(.7)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
o
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
o
Current
.375"(9.5mm) Lead Length @T
A
= 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@2.0A
Maximun DC Reverse Current @
at Rated DC Blocking Voltage @
T
A
= 25 C
o
T
A
= 100 C
o
HER201 HER202 HER203 HER204 HER205 HER206 HER207 HER208
UF2001 UF2002 UF2003
UF2004 UF2005 UF2006 UF2007
UNITS
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
T
RR
C
J
T
J
T
STG
50
50
-55 to+125
-55 to+150
1.0
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
1.7
V
uA
uA
75
30
nS
pF
o
o
60
1.3
5.0
100
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
C
C
NOTES: 1. Reverse Recovery Test Conditions: I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A
2.Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
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