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TSP075A

Description
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
File Size84KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

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DATA SHEET
TSP058A~TSP320A
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
• Protects by limiting voltages and shunting surge currents away from sensitive circuits
1.0(25.4) MIN.
DO-15
.034(.86)
.028(.71)
Unit: inch ( mm )
• Designed for telecommunications applications such as line cards, modems, PBX, FAX,
LAN,VHDSL
• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68
• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
MECHANICAL DATA
• Case: JEDEC DO-15 molded plastic
• Te r m i n a l s : P l a t e d A x i a l l e a d s , s o l d e r a b l e p e r
MIL-STD-750, Method 2026
• Polarity: Bi-directional
• Weight: 0.015 ounce, 0.4 gram
.300(7.6)
.230(5.8)
.140(3.6)
.104(2.6)
SUMMARY ELECTRICAL CHARACTERISTICS
Rated Repetitive
PeakOff-State
Voltage
Part Number
Max.
V
DRM
V
TSP058A
TSP065A
TSP075A
TSP090A
TSP120A
TSP140A
TSP160A
TSP190A
TSP220A
TSP275A
TSP320A
notes
NOTES:
1. Specific V
DRM
values are available by request.
2. Specific I
H
values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. V
DRM
applies for the life of the device. I
DRM
will be in spec during and following operation of the device.
5. V
BO1
is at 100V/msec, I
SC
=10A
pk
, V
OC
=1KV
pk
, 10/1000 Waveform
6. V
BO2
is at f = 60 Hz, I
SC
= 1 A
(RMS)
, Vac = 1KV
(RMS)
, R
L
= 1 KW, 1/2 AC cycle
DATE : SEP.02.2002
PAGE . 1
58
65
75
90
120
140
160
190
220
275
320
(1,3)
Breakover
Voltage
Max.
V
BO
@ I
BO
V
77
88
98
130
160
180
220
260
300
350
400
(3,5,6)
On-State
Voltage
Max.
V
T
@ 1A
V
5
5
5
5
5
5
5
5
5
5
5
(3)
Repetitive
Breakover Holding
Off-State Capacitance
PeakOff-State
Current Currnet (f = 1 MHz , Vac = 15 mV
RMS
)
Current
Max.
I
DRM
µA
5
5
5
5
5
5
5
5
5
5
5
(3)
Max.
I
BO
mA
800
800
800
800
800
800
800
800
800
800
800
(3)
Min.
I
H
mA
150
150
150
150
150
150
150
150
150
150
150
(2,3)
44
39
37
34
32
29
28
28
27
27
27
(3)
Typ.
pF
66
64
57
54
48
47
43
40
40
38
38
(3)
16
15
13
12
12
9
9
8
8
8
8
(3)
Max.
Typ.
pF
24
23
20
18
17
16
15
14
14
13
13
(3)
Max.
1.0(25.4) MIN.
C
O
@ 0 V
dc
C
O
@ 5 0 V
dc

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