EEWORLDEEWORLDEEWORLD

Part Number

Search

TSD5N65M

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 3A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 3Ω @ 1.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 58W (Tc) Type: N-channel N-channel, 650V, 3A, 3.0Ω
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,10 Pages
ManufacturerSHENZHEN TRUESEMI SEMICONDUCTOR CO., LTD.
Websitehttp://www.truesemi.com
Xinan Semiconductor was established in 2008 and is a wholly-owned subsidiary of Allianz Group. It is committed to the sales of MOSFET products in Greater China. In 2009, Allianz Group invested in the field of semiconductor design in South Korea and acquired the 8-inch VD-MOS chip factory of POWER SOLUSTION in South Korea in the same year. POWER SOLUSTION is a professional power semiconductor FAB OWN company. The company was established in 2005. It mainly engages in the production and research and development of POWER MOSFET and IGBT. At present, the monthly production capacity of 8 inches is 12,000 pieces, which is the only PLANNER 8-inch wafer production line in East Asia. They have rich industry experience in product research and development and production processes. The company was recognized as an IT VENTURE enterprise by the Korean government in 2009. It has affiliated research institutes in Far East University and Bucheon, South Korea. At present, VD-MOSFET and IGBT products have obtained 12 technical patents from the Korean government. The products produced by POWER SOLUSTION are widely used in various fields such as welding machines, inverters, ballasts, adapters, chargers, PC power supplies, and TV power supplies. South Korean companies such as Samsung Electronics, LG Electronics, and Konka are all end customers of POWER SOLUSTION.
Download Datasheet Parametric View All

TSD5N65M Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 3A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 3Ω @ 1.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 58W (Tc) Type: N-channel N-channel, 650V, 3A, 3.0Ω

TSD5N65M Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C3A(Tc)
Gate-source threshold voltage5V @ 250uA
Drain-source on-resistance3Ω @ 1.5A,10V
Maximum power dissipation (Ta=25°C)58W(Tc)
typeN channel

TSD5N65M Preview

Download Datasheet
TSD5N65M/TSU5N65M
TSD5N65M/TSU5N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 3.0A,650V,Max.R
DS(on)
=3.0 Ω @ V
GS
=10V
• Low gate charge(typical 16nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T
J
=25℃ unless otherwise specified
Parameter
Value
650
± 30
T
C
= 25℃
T
C
= 100℃
(Note 1)
(Note 2)
(Note 1)
(Note 3)
3.0
1.8
12
210
5.8
4.5
58
0.46
-55 to +150
300
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25℃)
-Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient*
Thermal Resistance,Junction-to-Ambient
Max
2.16
50
110
Units
℃/W
℃/W
℃/W
© 2018 Truesemi Semiconductor Corporation
Ver.C1
www.truesemi.com
Getting Started with Using TouchGFX to Develop STM32 Interface Applications (Part 2) - Button and Message Response Routines
[font=微软雅黑][size=4]In the previous article: [url=https://www.jianshu.com/p/777c7a75ade7]Using TouchGFX to Develop STM32 Interface Applications: Getting Started (Part 1)[/url], we briefly introduced th...
okhxyyo stm32/stm8
【EasyARM-RT1052 Review】+ Unboxing Experience
[i=s]This post was last edited by ID.LODA on 2018-12-17 14:32[/i] [font=微软雅黑][size=4]Thank you very much for the evaluation opportunity provided by the community. [/size][/font][font=微软雅黑][size=4] [/s...
ID.LODA NXP MCU
Practical RF training course sharing 2
[i=s]This post was last edited by btty038 on 2021-12-23 07:52[/i]RF Basics Lecture...
btty038 RF/Wirelessly
Looking for books that explain basic circuits?
Please recommend some books that explain the basics of class D amplification, current mirror, differential amplification, phase-locked loop, RF oscillator, balun, etc. Don't try the ones that start wi...
bigbat Analog electronics
【Goodbye 2021, Hello 2022】+ My summary of 2021
Today is December 31, 2021, the last day of 2021. I should summarize what I have gained at EEworld on this day.Summarizing 2021, I feel that time has passed too quickly. In a blink of an eye, another ...
tagetage Talking
Super detailed teaching you to use HFSS to design and simulate inverted F antenna 3
The influence of antenna structural parameters on antenna performanceThe parameter scanning analysis function of HFSS is used below to analyze the actual effects of the resonant length L of the invert...
btty038 RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号