TDM3742 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> TDM3742

TDM3742: DescriptionDrain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 180A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 3.6mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 272W (Tc) Type: N-channel N-channel 80V 3.6mΩ@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size472KB，7 Pages; ManufacturerTechcode Semiconductor, Inc.; Websitehttp://www.techcodesemi.com/cn/index.asp; In the field of high-end analog circuit design and production, American Ted Semiconductor Co., Ltd. has 12 years of comprehensive design experience. We not only have the world's leading analog circuit design technology, but also have a more complete and advanced product quality management method. Due to the production method of "no production line design company", we use a more efficient wafer foundry cooperation model in business operations, so that we can quickly use advanced and more time-effective technology to design high-end analog circuit products with higher cost performance, and then quickly meet customers' needs for high-end products in the growing market demand.

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TDM3742 Overview

Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 180A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 3.6mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 272W (Tc) Type: N-channel N-channel 80V 3.6mΩ@10V

TDM3742 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	80V
Continuous drain current (Id) at 25°C	180A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	3.6mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)	272W(Tc)
type	N channel

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