SVF20N50F datasheet, PDF - EEWORLD Datasheet

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SVF20N50F: DescriptionHigh voltage MOSFET; CategoryDiscrete semiconductor; File Size521KB，8 Pages; ManufacturerSilan; Websitehttp://www.silanic.com.cn/; Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.

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SVF20N50F Overview

High voltage MOSFET

Parameters

BVDSS[V]：500

Type：N

VGS[±V]：30

ID[A]：20

VGS(TH)[V]：2～4

RDS(on).Max@VGS=10V[Ω]：0.27

Package：TO-220F-3L

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SVF20N50F/PN

说明书

20A、500V N沟道增强型场效应管

描述

SVF20N50F/PN

是

沟道增强型高压功率

MOS

场效应晶½管，

采用士兰微电子的

F-Cell

平面高压

VDMOS

工艺技术制造。先进的

工艺及条状的原胞设计结构½得该产品具有较½的导通电阻、

优越的开

关性½及很高的雪崩击穿耐量。

该产品可广泛应用于

AC-DC

开关电源，DC-DC 电源½换器，高

压

桥

PWM

马达驱动。

1.栅极 2.漏极 3.源极

特点



20A，500V，R

DS(on)(

典型值

)

=0.20@V

=10V

½栅极电荷量

½反向传输电容

开关速度快

提升了

dv/dt

½力

TO-220F-3L

TO-3P

½名规则

产品规格分类

产品名称

SVF20N50F

SVF20N50PN

封装½式

TO-220F-3L

TO-3P

打印名称

SVF20N50F

20N50

材料

无铅

包装

料管

杭州士兰微电子股½有限公司

http: //www.silan.com.cn

版本号：1.5

共

页第

页

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