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ST2SC4375U

Description
NPN Silicon Epitaxial Planar Transistor
File Size359KB,3 Pages
ManufacturerNanjing International Group Co.,Ltd
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ST2SC4375U Overview

NPN Silicon Epitaxial Planar Transistor

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ST 2SC4375U
NPN Silicon Epitaxial Planar Transistor
 
High current application
Absolute Maximum Ratings (T
a
= 25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
J
T
Stg
Value
30
30
5
1.5
0.5
1
1)
150
- 55 to + 150
Unit
V
V
V
A
W
When mounted on a 250 mm
2
X 0.8 t ceramic substrate.
Characteristics at T
a
= 25℃
Parameter
DC Current Gain
at V
CE
= 2 V, I
C
= 500 mA
Current Gain Group
O
Y
Symbol
h
FE
h
FE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE
f
T
C
ob
Min.
100
160
30
30
5
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
-
Max.
200
320
-
-
-
100
100
2
1
-
40
Unit
-
-
V
V
V
nA
nA
V
V
MHz
pF
Collector Base Breakdown Voltage
at I
C
= 1 mA
Collector Emitter Breakdown Voltage
at I
C
= 10 mA
Emitter Base Breakdown Voltage
at I
E
= 1 mA
Collector Cutoff Current
at V
CB
= 30 V
Emitter Cutoff Current
at V
EB
= 5 V
Collector Emitter Saturation Voltage
at I
C
= 1.5 A, I
B
= 30 mA
Base Emitter Voltage
at V
CE
= 2 V, I
C
= 500 mA
Transition Frequency
at V
CE
= 2 V, I
C
= 500 mA
Collector Output Capacitance
at V
CB
= 10 V, f = 1 MHz
Dated: 26/12/2013 Rev: 01
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