SSP61C series
Low Power Voltage Detector
Features
Low power consumption
Low temperature coefficient
Built-in hysteresis characteristic
High input voltage (up to 8V)
Output voltage accuracy: tolerance
±1%
or
±2%
SOT23-3 and SOT23 package
Applications
Battery checkers
Level selectors
Power failure detectors
Microcomputer reset
Battery memory backup
Non-volatile RAM signal storage protectors
General Description
The SSP61C series devices are a set of three
terminal low power voltage detectors implemented
in CMOS technology. Each voltage detector in the
series detects a particular fixed voltage ranging
from 0.9V to 5.0V. The voltage detectors consist of
a high-precision and low power consumption
hysteresis circuit, and an output driver (CMOS
standard voltage source as well as a comparator,
Selection Table
Part No.
PR
Det. Voltage
0.9V
0.9V
1.0V
1.0V
1.1V
1.1V
1.2V
1.2V
…
5.0V
5.0V
4%
4%
4%
4%
4%
4%
4%
4%
4%
4%
4%
O
voltages.
Hys. Width
IN
Output
CMOS
NMOS
CMOS
NMOS
CMOS
NMOS
CMOS
NMOS
…
CMOS
NMOS
inverter or NMOS open drain). CMOS technology
ensures low power consumption.
Although designed primarily as fixed voltage
detectors, these devices can be used with external
components to detect user specified threshold
Tolerance
±1% or ±2%
±1% or ±2%
±1% or ±2%
±1% or ±2%
±1% or ±2%
±1% or ±2%
±1% or ±2%
±1% or ±2%
±1% or ±2%
±1% or ±2%
±1% or ±2%
Package
SSP61CC0902MR
SSP61CC1002MR
SSP61CC1102MR
SSP61CN0902MR
SSP61CN1002MR
SSP61CN1102MR
SSP61CC1202MR
SSP61CN1202MR
…
SSP61CC5002MR
SSP61CN5002MR
SI
SOT23-3
SOT23
Ver1.2
1
Shanghai Siproin Microelectronics Co.
SSP61C series
Low Power Voltage Detector
Order Information
SSP61C①②③④⑤⑥⑦
Designator
①
②③
④⑤
C
N
VOUT
02
01
⑥
M
N
⑦
R
G
Symbol
CMOS output
NMOS output
Output Voltage(0.9~5.0V)
±2%
accuracy
±1%
accuracy
Package:SOT23-3
Package:SOT23
RoHS / Pb Free
Halogen Free
Description
Block Diagram
Typical Application Circuits
Ver1.2
SI
2
Shanghai Siproin Microelectronics Co.
PR
O
IN
SSP61C series
Low Power Voltage Detector
Absolute Maximum Ratings
Supply Voltage ................................-0.3V to 8V
Operating Temperature .................-40℃ to 85℃
Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other
conditions beyond those listed in the specification is not implied and prolonged exposure to extreme
conditions may affect device reliability.
Storage Temperature ..................-50℃ to 125℃
Thermal Information
Symbol
θ
JA
Parameter
Thermal Resistance (Junction to
Ambient) (Assume no ambient
airflow, no heat sink)
Power Dissipation
Package
SOT23-3
SOT23-3
Max.
500
0.20
Unit
℃/W
P
D
Note: P
D
is measured at Ta= 25℃
Electrical Characteristics
V
DF
=0.8V~5.0V
Symbol
V
DET
V
HYS
Parameter
O
Test Conditions
V
DF
=0.8V~5.0V
-
Min.
V
DF
*0.98
0.02*V
DET
-
-
-
-
-
0.7
0.5
Typ.
V
DF
0.05*V
DET
0.7
0.8
0.9
1.0
1.1
-
1
±100
Vin=1.5V
Vin=2.0V
Vin=3.0V
Vin=4.0V
Vin=5.0V
-
2V
-
V
OUT
=0.2V
-25℃
<Ta<125℃
-
-
IN
5
W
Ta=25
℃
Max.
V
DF
*1.02
0.10*V
DET
2.3
2.7
3.0
3.2
3.6
10
-
V
mA
ppm/℃
μA
Unit
V
V
Detection Voltage
Hysteresis Width
I
DD
V
DD
I
OL
∆
V
DET
V
DF
∆
T
a
SI
Operating Current
Operating Voltage
Output Sink Current
Temperature
Coefficient
PR
-
Ver1.2
Shanghai Siproin Microelectronics Co.
NXP MCU
京公网安备 11010802033920号
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