SS22_11 datasheet, PDF - EEWORLD Datasheet

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SS22_11: Description2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size152KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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SS22_11 Overview

2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA

2 A, 100 V, 硅, 整流二极管, DO-214AA

SS22_11 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	SMB, 2 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Maximum power consumption limit	1.3 W
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	100 V
Maximum average forward current	2 A
Maximum non-repetitive peak forward current	50 A

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SS22 THRU SS210

肖特基二极管

Schottky Rectifier

■特征

Features

■外½尺寸和印记

Outline Dimensions and Mark

M ounting P ad Layout

0.069

(1.76)

0.1 07

(2 .72)

0 .08 1(2 .072)

.0 12(0.31)

.0 06(0.15)

0 .228

(5.8 0)

●

2.0A

●

RRM

20V-100V

●

耐正向浪涌电流½力高

High surge current capability

●

封装：模压塑料

Cases: Molded plastic

DO-214AA(SMB)

.0 85(2.15)

.0 73(1.85)

.1 87(4.75)

.1 67(4.25)

.1 03(2.61)

.0 78(1.99)

.056 (1.4 1)

.035 (0.9 0)

.0 08(0.20)

.0 04(0.10)

.220 (5.5 9)

.205 (5.2 1)

.155 (3.9 4)

.130 (3.3 0)

■用途

Applications

●整流用

Rectifier

D im ensions in inches and (m illim eters)

■极限值（绝对最大额定值）

Limiting Values (Absolute Maximum Rating)

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

正向平均电流

Average Forward Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward

Current

结温

Junction Temperature

储存温度

Storage Temperature

符号

Symbol

RRM

F(AV)

FSM

STG

单½

Unit

测试条件

Test Conditions

正弦半波60Hz，

电阻负½½，

TL(Fig.1)

60HZ Half-sine wave, Resistance

load, TL(Fig.1)

正弦半波60Hz，

一个周期，

Ta=25℃

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

2.0

SS SS

29 210

100

℃

-55~+125

-55~+150

-55 ~ +150

■电特性

（Ta=25℃ 除非另有规定）

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向漏电流

Peak Reverse Current

热阻(典型)

Thermal

Resistance(Typical)

符号

Symbol

RRM1

RRM2

J-A

单½

Unit

测试条件

Test Condition

=2.0A

RRM

Ta =25℃

Ta =100℃

0.50

SS SS

29 210

0.85

0.1

5.0

0.70

0.5

℃

J-L

结和环境之间

Between junction and ambient

结和终端之间

Between junction and terminal

备注：Notes:

热阻从结到环境及从结到引线，在电路板的

0.3" x 0.3" (8.0毫米 x 8.0毫米)铜垫片区

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper

pad areas

Document Number 0227

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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