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SMFJ40A

Description
Polarity: Unidirectional Peak pulse current (10/1000us): 3.1A Clamping voltage: 64.5V Breakdown voltage (minimum): 44.4V Reverse shutdown voltage (typ): 40V SOD-123FL 200W VRWM=40V single To power TVS power port
CategoryDiscrete semiconductor    TVS diode   
File Size1MB,7 Pages
ManufacturerBORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.
Websitehttp://www.born-tw.com/
BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
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SMFJ40A Overview

Polarity: Unidirectional Peak pulse current (10/1000us): 3.1A Clamping voltage: 64.5V Breakdown voltage (minimum): 44.4V Reverse shutdown voltage (typ): 40V SOD-123FL 200W VRWM=40V single To power TVS power port

SMFJ40A Parametric

Parameter NameAttribute value
polarityUnidirectional
Peak pulse current (10/1000us)3.1A
clamping voltage64.5V
Breakdown voltage (minimum value)44.4V
Reverse shutdown voltage (typ)40V

SMFJ40A Preview

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SMFJ Series
Transient Voltage Suppressors
ROHS
Features
Peak power dissipation 200W @10 x 1000 us Pulse
Low profile package.
Excellent clamping capability.
Glass passivated junction.
Fast response time: typically less than 1ns from 0 Volts to BV min
Typical I
R
less than 1uA when V
BR
min above 15V.
IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact)
ESD protection of data lines in accordance with IEC 61000-4-2
EFT protection of data lines in accordance with IEC 61000-4-4
Halogen free and RoHS compliant
Lead-free finish
SOD-123FL
Mechanical Characteristics
CASE: SOD-123FL Molded Plastic over glass passivated junction.
Mounting Position: Any
Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device.
Terminal: Solder plated
Maximum Ratings and Characteristics
@ 25°C Ambient Temperature (unless otherwise noted)
Parameter
Symbol
Value
Units
Peak Pulse Power Dissipation on 10/1000 us Waveform
Peak Pulse Current of on 10/1000us Waveform
Operating Junction Temperature Range
Storage Temperature Range
Notes:
(Note 1, 2, FIG.1)
P
PPM
I
PPM
T
J
T
STG
Min 200
See Table 1
-55 to 150
-55 to 150
W
A
°C
°C
(Note 1, FIG.3)
1.
Non-repetitive current pulse, per Fig.3 and derated above T
A
=25°C per Fig.2.
1/7
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