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SMBJ75

Description
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR surface mount transient suppressor
CategoryDiscrete semiconductor    diode   
File Size1MB,3 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SMBJ75 Overview

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR surface mount transient suppressor

Features

Product Name: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR


Product model: SMBJ75


product features:


For surface mounted application


Low profile package


Built-in strain relief


Glass passivated junction


Fast response time : Typically less than 1.0ps from 0 volt to BV min.


Typical IR less than 1uA above 10V


High temperature soldering guaranteed: 250℃/ 10 seconds at terminals


Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0


600 watts peak pulse power capability with a 10×1000 us waveform by 0.01% duty cycle



Mechanical data:


Casea: molded plastic


Terminals: Solder plated


Polarity: Indicated by cathode band


Standard Pcakaging : 16mm tape (EIA STD RS-481)


Weight: 0.093 gram



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.



product data:


Peak Power Dissipation at Ta=25℃ Tp=1ms PPK Forward power consumption: Minimun 600W


Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)- Unidirectional Only IFSM Forward surge current: 100A


Maximum Instaneous Forward Voltage at 100A for Unidirectional Only


VF Maximum forward voltage drop: 3.5/5.0 V


Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -65 to +150℃


Breakdown Voltage V(BR) Breakdown Voltage: Min: 83.3V Max: 102V


Test Current at IT Test current: 1.0mA


Stand-Off Voltage Vwm Stand-Off Voltage: 75V


Max Reverse Leakage at Vwm IR Maximum reverse leakage current: 5μA


Max Peak Pulse Current IPPM Maximum peak pulse current: 4.7A


Max Clamping Voltage at IPPM VC 最大箝位电压:134V



Package: SMB/DO214-AA


SMBJ75 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknow
Breakdown voltage nominal value92.65 V
Maximum clamping voltage134 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage75 V
surface mountYES
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