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SMAJ8.5AF1

Description
400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size214KB,7 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SMAJ8.5AF1 Overview

400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, SMA, 2 PIN

SMAJ8.5AF1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage10.4 V
Minimum breakdown voltage9.44 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Maximum repetitive peak reverse voltage8.5 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

SMAJ8.5AF1 Preview

Download Datasheet
SMAJ SERIES 
 
Surface Mount Transient Voltage Suppressor
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
High forward surge capability
Available in uni-directional 400 W peak pulse
power capability with a 10/1000
μs
waveform
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
Mechanical Data
Package:
DO-214AC (SMA) 
 
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
 
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Peak power dissipation, with a 10/1000us waveform
(1) (2) (Fig.1)
Peak pulse current, with a 10/1000us waveform
(1)
Power dissipation, on infinite heat sink at TL=75℃
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only
(2)
Operating junction and storage temperature range
SYMBOL
PPPM
IPPM
PD
IFSM
TJ,TSTG
UNIT
W
A
W
A
Max
400
See Next Table
1.0
40
-55 to +150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous forward voltage
@ at 25A for unidirectional only (3)
SYMBOL
VF
UNIT
V
VALUE
3.5/5.0
Thermal Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Thermal resistance(Typical)
SYMBOL
UNIT
℃/W
℃/W
Conditions
VALUE
R
θJL
R
θJA
junction to lead
junction to ambient, L
Lead
= 10 mm
30
120
1/7
S-S096
Rev. 2.0, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com

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