SMAJ SERIES
RoHS
COMPLIANT
Surface Mount Transient Voltage Suppressor Diodes
Uni-directional
Features
●
For surface mounted applications
●
Low-profile package
●
Ideal for automated placement
●
Available in Unidirectional and Bidirectional
●
400 W peak pulse power capability with a 10/1000
μs
waveform
●
Low incremental surge resistance, excellent clamping
capability
●
Very fast response time
●
High temperature soldering guaranteed: 260 °C/10 s at
terminals
Bi-directional
●
Meets MSL level 1
●
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Typical Applications
Use in sensitive electronics protection against voltage transients
induced by inductive load switching and lighting on ICs, MOSFET,
signal lines of sensor units for consumer, computer, industrial,
telecommunication.
Mechanical Data
●
Package:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
●
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
For uni-directional types the band denotes cathode
end, no marking on bi-directional types
■
Maximum Ratings
(Ta=25℃ Unless otherwise specified
）
PARAMETER
Peak power dissipation, with a 10/1000us waveform
(1) (2) (Fig.1)
Peak pulse current, with a 10/1000us waveform
(1)
Power dissipation, on infinite heat sink at TL=75℃
Peak forward surge current, 8.3 ms single
half sine-wave unidirectional only (2)
Operating junction and storage temperature range
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
,T
STG
UNIT
W
A
W
A
℃
Max
400
See Next Table
1.0
40
-55 to +150
■Electrical
Characteristics
（T
a=25℃ Unless otherwise specified）
PARAMETER
Maximum instantaneous forward voltage
@ at 25A for unidirectional only (3)
Maximum instantaneous forward voltage
@ at 1A for unidirectional only
SYMBOL
V
F
V
F
UNIT
V
V
VALUE
3.5/5.0
1.5
1/7
S-S096
Rev. 2.3, 17-Apr-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
SMAJ SERIES
■
Thermal Characteristics
（T
a=25℃ Unless otherwise specified）
PARAMETER
SYMBOL
R
θJL
Thermal resistance(Typical)
R
θJA
Notes:
(1)
(2)
(3)
Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25
℃
per Fig.2.
Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
℃/W
junction to ambient
120
UNIT
℃/W
Conditions
junction to lead
VALUE
30
■Electrical
Characteristics
（T
a=25℃ Unless otherwise specified）
Part Number
(Uni)
SMAJ5.0
SMAJ5.0A
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
Part Number
(Bi)
SMAJ5.0C
SMAJ5.0CA
SMAJ6.0C
SMAJ6.0CA
SMAJ6.5C
SMAJ6.5CA
SMAJ7.0C
SMAJ7.0CA
SMAJ7.5C
SMAJ7.5CA
SMAJ8.0C
SMAJ8.0CA
SMAJ8.5C
SMAJ8.5CA
SMAJ9.0C
SMAJ9.0CA
SMAJ10C
SMAJ10CA
SMAJ11C
SMAJ11CA
SMAJ12C
SMAJ12CA
SMAJ13C
SMAJ13CA
SMAJ14C
SMAJ14CA
SMAJ15C
SMAJ15CA
Breakdown Voltage V
BR
@I
T
Min(V)
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.00
10.00
11.10
11.10
12.20
12.20
13.30
13.30
14.40
14.40
15.60
15.60
16.70
16.70
Max (V)
7.30
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.20
9.21
10.90
9.83
11.50
10.40
12.20
11.10
13.60
12.30
14.90
13.50
16.30
14.70
17.60
15.90
19.10
17.20
20.40
18.50
I
T
(mA)
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(4)
Maximum
Maximum
Working Peak
Reverse Leakage
Reverse Surge
Reverse Voltage
(6)
(5)
I
R
@ V
RWM
Current I
PP
V
RWM
(V)
(μA)
(A)
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
41.67
43.38
35.09
38.83
32.52
35.71
30.08
33.33
27.97
31.01
26.67
29.41
25.16
27.78
23.67
25.97
21.28
23.53
19.90
21.98
18.18
20.10
16.81
18.60
15.50
17.24
14.87
16.39
Maximum
Clamping
Voltage Vc
@ I
PP
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
2/7
S-S096
Rev. 2.3, 17-Apr-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
SMAJ SERIES
Notes:
(4) Pulse test: t
p
≤50ms
(5) Surge current waveform per Fig. 3 and derated per Fig.2.
(6) For bi-directional types having V
RWM
of 10 V and less, the I
R
limit is doubled.
■
Characteristics (Typical)
FIG1:Peak Pulse Power Rating Curve
PPPM(KW)
PPP or IPP(%)
FIG2: Pulse Power or Current vs. Initial Junction Temperature
100
100
不重复脉冲波½见图
3
Non-Repetitive Pulse
Waveform shown in Fige.3
TA=25
℃
75
10
50
1.0
25
0.1
0.2×0.2"(5.0×5.0mm)
Copper Pad Areas
0.1μs
1μs
10μs
100μs
1.0ms
10ms
td(μs)
FIG3: Pulse Waveform
Rth(
℃
/W)
0
0
25
50
75
100
125
150
175 200
TJ
（℃）
FIG4:Typical Transient Thermal Impedance
1000
IPPM(%)
150
tr=10μs
Peak Value
IPPM
TJ=25
℃
Pulse Width(td) is defined as
the Point where the Peak
Current Decays to 50% of IPPM
100
100
Half Value - IPP
2
IPPM
50
10/1000μs Waveform as
Defined by R.E.A.
10
td
0
1
0
1.0
2.0
3.0
4.0
t
（
ms
）
0.001
0.01
0.1
1
10
100
1000
tp(s)
FIG5: Maximum Non-Repetitive Surge Current
100
Peak Forward Surge Current(A)
80
60
40
TJ=TJMax.
8.3ms Single Half Sine-Wave
20
10
0
5
10
Number of Cycles
100
5/7
S-S096
Rev. 2.3, 17-Apr-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Parametric
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Microcontroller MCU
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