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SMA6.8CA

Description
Trans Voltage Suppressor Diode, 5.8V V(RWM), Bidirectional
CategoryDiscrete semiconductor    diode   
File Size922KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SMA6.8CA Overview

Trans Voltage Suppressor Diode, 5.8V V(RWM), Bidirectional

SMA6.8CA Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Breakdown voltage nominal value6.8 V
Maximum clamping voltage10.5 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage5.8 V
surface mountYES

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SURF ACE MOUNT
UNIDIREC TIONAL AND BIDIRECT IONAL
TRANSIE NT V OLTA GE S UPPRESS ORS
REVERSE VOLTAGE - 6.8 to 200 VOLTS
FORWARD CURRENT - 400 Amperes
FEATURES
Rating to 200V
VBR
For surface mou nted applications
Reiiable low cost construction utilizing
molded plastic te chnique
Plastic material has UL flammability
classification 94V-0
Fast response time: typically less than 1.0ps for
Uni-direction, less than 5.0ns for Bi-direction, form
0 Volts to BV min
SMA
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.114(2.90)
.098(2.50)
MECHANICAL DA
Case: Molde d Plastic
Polarity: By cathode band denot es uni-directional
dev ice none cathode b and denotes bi-direc tional
dev ice
Weig ht: 0.002 ounce s, 0.064 grams
TA
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.208(5.28)
.188(4.80)
.012(.305)
.006(.152)
.008(.203)
.002(.051)
Rating at 25
ambient temperaature unless
otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RA
TINGS AND
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Pea k Power Dissipation at T
TP= 1ms(No te 1,2 )
A
=25
SYMBOL
P
PK
VALUE
Minimum 400
UNIT
WATTS
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Steady State Power Dissipation at TL=75
I
FSM
40
1.0
AMPS
P
M(AV)
WATTS
Maximum Instantaneous forward voltage
at 25A for unidirectional devices only (Note 3)
V
F
3.5
VOLTS
Operating Temperature Range
T
J
-55 to +125
-55 to +150
Storage Temperature Range
T
STG
NOT ES:1 . No n-repetitive current pulse, per Fig. 3 and derated above T
A
=25 per Flg. 1.
2 . Thermal Resistance Junction to Lead.
3. 8 . 3ms s ingle h alf sine- wave duty c ycle=4 puls es per m inutes ma ximum (uni-direction al units only).
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