SL2310 datasheet, PDF - EEWORLD Datasheet

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SL2310: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 2V @ 250uA Drain-source on-resistance: 105mΩ @ 3A, 10V Maximum power dissipation (Ta= 25°C): 1.7W Type: N-channel N-channel, 60V, 3A, 105mΩ@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size385KB，6 Pages; ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.; Websitehttp://www.slkormicro.com/; Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

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SL2310 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 2V @ 250uA Drain-source on-resistance: 105mΩ @ 3A, 10V Maximum power dissipation (Ta= 25°C): 1.7W Type: N-channel N-channel, 60V, 3A, 105mΩ@10V

SL2310 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	3A
Gate-source threshold voltage	2V @ 250uA
Drain-source on-resistance	105mΩ @ 3A,10V
Maximum power dissipation (Ta=25°C)	1.7W
type	N channel

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