SL13N50FS datasheet, PDF - EEWORLD Datasheet

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SL13N50FS: DescriptionDrain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 13A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 520mΩ @ 6.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W (Tc) Type: N channel N channel, 500V, 13A, 0.4Ω@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size1MB，5 Pages; ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.; Websitehttp://www.slkormicro.com/; Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

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SL13N50FS Overview

Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 13A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 520mΩ @ 6.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W (Tc) Type: N channel N channel, 500V, 13A, 0.4Ω@10V

SL13N50FS Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	500V
Continuous drain current (Id) at 25°C	13A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	520mΩ @ 6.5A,10V
Maximum power dissipation (Ta=25°C)	50W(Tc)
type	N channel

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SL13N50FS

N-Channel

Power MOSFET

●Features：

■

13.0A, 500V, R

DS(on)(Typ)

=0.40Ω@V

=10V

■

Low Gate Charge

■

Low C

rss

■

100% Avalanche Tested

■

Fast Switching

■

Improved dv/dt Capability

●Application:

■

High Frequency Switching Mode Power Supply

■

Active Power Factor Correction

Absolute Maximum Ratings(Tc=25C

unless otherwise noted)

Symbol

Parameter

DSS

GSS

dv/dt

Tstg

Drain-Source Voltage

Drain Current

- Continuous(Tc=25C)

- Continuous(Tc=100C)

-Pulsed

(Note1)

Schematic diagram

TO-220F

Value

500

13.0*

8.0*

52*

±30

845

13.0

19.5

4.5

0.4

150

-55 to+150

Unit

V/ns

W/C

C

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note2)

(Note1)

(Note3)

Power Dissipation(T

=25C)

-Derate above 25°C

Operating Junction Temperature

Storage Temperature Range

Drain Current Limited by Maximum Junction Temperature.

Thermal Characteristics

Symbol

θJC

θJA

Parameter

Max

2.58

62.5

Unit

C

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

www.slkormicro.com

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