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SL11N65CF

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 11.5A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 360mΩ @ 7A, 10V Maximum power consumption Dispersion (Ta=25°C): 32.6W(Tc) Type: N-channel CoolMos 650V Rds: 300mΩ
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size648KB,8 Pages
ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.
Websitehttp://www.slkormicro.com/

Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

Download Datasheet Parametric View All

SL11N65CF Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 11.5A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 360mΩ @ 7A, 10V Maximum power consumption Dispersion (Ta=25°C): 32.6W(Tc) Type: N-channel CoolMos 650V Rds: 300mΩ

SL11N65CF Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C11.5A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance360mΩ @ 7A,10V
Maximum power dissipation (Ta=25°C)32.6W(Tc)
typeN channel

SL11N65CF Preview

Download Datasheet
SL11N65C
N-Channel
Super Junction Power MOSFET
V
DS
R
DS(ON)TYP
I
D
650
300
11.5
V
A
Features
New technology for high voltage device
Low on-resistance and low conduction losses
small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
Application
Power factor correction(PFC)
Switched mode power supplies(SMPS)
Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
SL11N65CK
SL11N65C
SL11N65CF
Device Package
TO-263
TO-220
TO-220F
Marking
SL11N65CK
SL11N65C
SL11N65CF
TO-263
Table 1.
Absolute Maximum Ratings (T
C
=25℃)
Parameter
Drain-Source Voltage (
V
GS=
0V)
Gate-Source Voltage (
V
DS
=0V), AC(f>1HZ)
Continuous Drain Current
Continuous Drain Current
Pulsed drain current
at T
C
=25°C
at T
C
=100°C
TO-220
TO-220F
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
P
D
E
AS
I
AR
E
AR
SL11N65CK
SL11N65C
650
SL11N65CF
Unit
V
V
±30
11.5
7
46
101
0.81
144
6
0.5
11.5*
7*
46*
32.6
0.26
A
A
A
W
W/
°C
(Note 1)
Maximum Power Dissipation(T
C
=25
℃)
Derate above 25°C
(Note2)
Single pulse avalanche energy
Avalanche current
(Note 1)
(Note 1)
mJ
A
Repetitive Avalanche energy
,t
AR
limited by T
jmax
mJ
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