SKBPC3514 datasheet, PDF - EEWORLD Datasheet

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SKBPC3514: DescriptionSILICON /GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS silicon / glass passivated three-phase bridge rectifier; CategoryDiscrete semiconductor; File Size84KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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SKBPC3514 Overview

SILICON /GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS silicon / glass passivated three-phase bridge rectifier

Features

Product Name: SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS Silicon / Glass Passivated Three-Phase Bridge Rectifier

Product model: SKBPC3514

product features:

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Mechanical data:

Case: Epoxy Case with Heat Sink Interally

Mounted in the Bridge Encapsulation

Terminals:Plated Leads Solderable per

MIL-STD_202.Method 208

Polarity: As Marked on Body

Weight:20 grams (apprex.)

Mounting Position:

Bolt Down on Heatsink With Silicone Thermal

Compound Between Bridge and Mouting Surface

For Maximun Heat Transfer Efficiency

Mounting Torque:20 in Ibs.Max.

Marking:Type Number

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Peak Repetitive Reverse Voltage VRRM Maximum reverse peak voltage: 1400V

Working Peak Reverse Voltage VRWM Working Peak Reverse Voltage: 1400V

DC Blocking Voltage VR DC blocking voltage: 1400V

Peak Non-Repetitive Reverse Voltage VRSM Peak reverse voltage: 1500V

RMS Reverse Voltage VR(RMS) Reverse voltage effective value: 980V

Maximum Average Forward Rectified Current @TC = 100℃ I(AV) Maximum forward current: 35 A

Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current:

(No Voltage Reapplid t=8.3ms at 60Hz) IFSM ：500 A

(No Voltage Reapplid t=10ms at 50Hz) IFSM ：475 A

(100% Reapplid t=8.3ms at 60Hz) IFSM ：420A

(100% Reapplid t=10ms at 50Hz) IFSM ：400 A

(I^2)t Rating for fusing

(No Voltage Reapplid t=8.3ms at 60Hz) (I^2)t ：1030 (A^2)S

(No Voltage Reapplid t=10ms at 50Hz) (I^2)t ：1130 (A^2)S

(100% Reapplid t=8.3ms at 60Hz) (I^2)t ：730 (A^2)S

(100% Reapplid t=10ms at 50Hz) (I^2)t ：800(A^2)S

Forward Voltage (per element) @ TJ=25℃,@IFM=40Apk per single junction VF ：1.2V

Peak Reverse Current (per leg) @ TJ=25℃ IR Maximum reverse leakage current: 10μA

At Rated DC Blocking Voltage @ TJ = 125℃ IR Maximum Reverse Leakage Current: 5.0mA

RMS Isolation Voltage from Case to Lead VISO ：2500V

Operating Temperature Range TJ Operating Junction Temperature: -40 to +125 ℃

Storage Temperature Range TSTG Storage Temperature Range: -40 to +150 ℃

Thermal Resistance Junction to Case at DC Operation per Bridge RθJC Thermal resistance coefficient: 1.16K/W

Thermal Resistance Case to Heatsink Mounting Surface,Smooth,Flat and Greased RθCS ：0.2K/W

Package: SKBPC

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SKBPC3504 THRU SKBPC3516

桥式整流器

Bridge Rectifier

■特征

Features

●

■外½尺寸和印记

Outline Dimensions and Mark

RRM

35A

400V~1600V

SKBPC

1.134(28.8)

1.110(28.2)

.980(24.9)

.941(23.9)

Hole for

#10 Screw

玻璃钝化芯片

Glass passivated chip

耐正向浪涌电流½力高

High surge forward current capability

.229(5.59)

DIA

.200(5.08)

●

.669(17.0)

.630(16.0)

1.134(28.8)

1.110(28.2)

■用途

Applications

●

½一般电源三相桥式整流用

General purpose 3 phase Bridge

rectifier applications

.033(0.85)

.029(0.75)

.251(6.4)

.244(6.2)

.441(11.2)

.425(10.8)

METAL HEAT SINK

.944(25.0)

MAX

Dimensions for inches and (millimeters)

■极限值（绝对最大额定值）

Limiting Values（Absolute Maximum Rating）

参数名称

Item

反向重复峰值电压

Repetitive Peak

Reverse Voltage

平均整流输出电流

Average Rectified

Output Current

正向（不重复）浪涌

电流

Surge(Nonrepetitive)

Forward Current

正向浪涌电流的平方

对电流浪涌持续时间

的积分值

Current Squared Time

存储温度

Storage Temperature

结温

Junction Temperature

绝缘耐压

Dielectric Strength

符号单½

Symbol Unit

RRM

条件

Conditions

SKBPC35

400

600

800 1000 1200 1400 1600

60Hz

正弦波，

电阻负½½

用散热器

Tc=55℃

60Hz sine wave, With heatsink Tc=55℃

R-load

60H

正弦波，一个周期，T

=25℃

60H

sine wave, 1 cycle, T

=25℃

FSM

400

1ms≤t<8.3ms Tj=25℃

单个二极管

1ms≤t<8.3ms Tj=25℃ Rating of per diode

660

stg

dis

℃

端子与外壳之间外加交流电，一分钟

Terminals to case

,AC

1 minute

-40 ~+150

-40~+150

2.5

■电特性（T

a=25℃

除非另有规定）

Electrical Characteristics

（T

=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

热阻

Thermal Resistance

符号

单½

Symbol Unit

RRM

J-C

μA

℃/W

测试条件

Test Condition

=12A,

脉冲测试，单个二极管的额定值

=12A, Pulse measurement, Rating of per diode

RRM

,脉冲测试，单个二极管的额定值

RRM

, Pulse measurement, Rating of per diode

结和管壳之间，用散热器

Between junction and case, With heatsink

最大值

Max

1.2

1.35

Document Number 0078

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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