Plastic-Encapsulate Mosfets
FEATURES
High dense cell design for extremely low R
DS(ON)
Rugged and reliable
Case Material: Molded
Plastic.
SI2305
P-Channel MOSFET
Absolute Maximum Ratings (TA=25
o
C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
a
Symbol
V
DS
V
GS
I
D
I
DM
o
Ratings
-12
Unit
V
V
A
A
W
°C
°C/W
±
8
-4.1
-10
0.35
-55 to +150
1.Gate
2.Source
3.Drain
SOT-23
Total Power Dissipation @TA=25 C
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
b
P
D
T
j,
T
stg
R
θJA
D
357
G
S
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
a
Drain-source on-state resistance
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
Test Condition
V
GS
= 0V, I
D
=-250µA
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±8V
V
DS
=-8V, V
GS
=0V
V
GS
=-4.5V, I
D
=-3.5A
Min
-12
-0.5
Typ
Max
Units
-0.9
±100
-1
30
40
60
45
60
90
V
nA
µA
mΩ
S
R
DS(on)
V
GS
=-2.5V, I
D
=-3A
V
GS
=-1.8V,I
D
=-2.0A
Forward transconductance
a
Dynamic
Input capacitance
b,c
Output capacitance
b,c
g
fs
V
DS
=-5V, I
D
=-4.1A
6
C
iss
C
oss
C
rss
V
DS
=-4V,V
GS
=-4.5V,
Q
g
Q
gs
Q
gd
R
g
I
D
=-4.1A
V
DS
=-4V,V
GS
=-2.5V,
I
D
=-4.1A
f =1MHz
1.4
V
DS
=-4V,V
GS
=0V,f =1MHz
740
290
190
7.8
4.5
1.2
1.6
7
14
Ω
15
9
nC
pF
Reverse transfer capacitance
b,c
Total gate charge
b
Gate-source charge
b
Gate-drain charge
b
Gate resistance
b,c
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P3-P1
Plastic-Encapsulate Mosfets
SI2305
Electrical Characteristics (TA=25°C, unless otherwise noted)
Turn-on delay time
b,c
Rise time
b,c
Turn-off Delay time
b,c
Fall time
b,c
Turn-on delay time
b,c
Rise time
b,c
Turn-off delay time
Fall time
b,c
b,c
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-4V,
R
L
=1.2Ω,
I
D
≈-3.3A,
V
GEN
=-4.5V,Rg=1Ω
13
35
32
10
5
11
22
16
20
53
48
20
10
17
33
24
ns
V
DD
=-4V,
R
L
=1.2Ω,
I
D
≈-3.3A,
V
GEN
=-8V,Rg=1Ω
Drain-source body diode characteristics
Continuous source-drain diode current
Pulse diode forward current
Body ciode voltage
Note :
a. Pulse Test ; Pulse Width
≤300µs,
Duty Cycle
≤2%.
b. Guaranteed by design, not subject to production testing.
c. These parameters have no way to verify.
a
I
S
I
SM
V
SD
T
C
=25℃
-1.4
-10
A
V
I
F
=-3.3A
-1.2
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P3-P2
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