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SE80130G

Description
Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 130A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 4.3mΩ @ 60A, 10V Maximum power dissipation ( Ta=25°C): 160W(Tc) Type: N channel N channel 80V 130A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size536KB,7 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE80130G Overview

Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 130A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 4.3mΩ @ 60A, 10V Maximum power dissipation ( Ta=25°C): 160W(Tc) Type: N channel N channel 80V 130A

SE80130G Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)80V
Continuous drain current (Id) at 25°C130A
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance4.3mΩ @ 60A,10V
Maximum power dissipation (Ta=25°C)160W(Tc)
typeN channel

SE80130G Preview

Download Datasheet
SE80130G
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low
operation voltage. This device is suitable for
using as a load switch or in PWM
applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
Features
For a single MOSFET
V
DS
= 80V
R
DS(ON)
=3.6mΩ @ V
GS
=10V
TO-263
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
Rating
80
±20
130
320
784
160
-55 to 175
Units
V
V
A
mJ
W
Single Pulse Avalanche Energy
Total Power Dissipation
@TC=25℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
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