SE60P20B datasheet, PDF - EEWORLD Datasheet

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SE60P20B: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 33mΩ @ 10A, 10V Maximum power dissipation (Ta =25°C): 170W Type: P channel P channel -60V -20A; CategoryDiscrete semiconductor MOS (field effect tube); File Size478KB，6 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE60P20B Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 33mΩ @ 10A, 10V Maximum power dissipation (Ta =25°C): 170W Type: P channel P channel -60V -20A

SE60P20B Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	20A
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	33mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)	170W
type	P channel

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SE60P20B

P-Channel Enhancement-Mode MOSFET

Revision: A

General Description

Thigh Density Cell Design For Ultra Low

On-Resistance Fully Characterized Avalanche

Voltage and Current Improved Shoot-Through

FOM



Simple Drive Requirement

Small Package Outline

Surface Mount Device

Features

For a single MOSFET



= -60V

DS(ON)

= 26mΩ @ V

=-10V

Pin configurations

See Diagram below

TO-252

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation

Continuous

Pulsed

@TA=25℃

Symbol

Rating

-60

±20

-20

-80

170

-55 to 150

Units

℃

Operating Junction Temperature Range

ShangHai Sino-IC Microelectronic Co., Ltd.

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