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SE60210GA

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 210A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.6mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 300W Type: N channel N channel 60V 210A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size369KB,5 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE60210GA Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 210A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.6mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 300W Type: N channel N channel 60V 210A

SE60210GA Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C210A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance2.6mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)300W
typeN channel

SE60210GA Preview

Download Datasheet
Dec 2014
SE60210GA
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
This type used advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge.
l
l
High density cell design for ultra low R
DS(ON)
Excellent package for good heat dissipation
Features
For a single MOSFET
l
l
l
V
DS
= 60V
R
DS(ON)
= 2.2mΩ @ V
GS
=10V
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed
Total Power Dissipation
@TA=25℃
P
D
T
J
I
D
800
300
-55 to 175
W
Symbol
V
DS
V
GS
Rating
60
±20
210
A
Units
V
V
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
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