SE4060 datasheet, PDF - EEWORLD Datasheet

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SE4060: DescriptionDrain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 60A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 7mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 65W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size912KB，12 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE4060 Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 60A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 7mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 65W Type: N-channel

SE4060 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	40V
Continuous drain current (Id) at 25°C	60A
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	7mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)	65W
type	N channel

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