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SE40120A

Description
Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 120A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 4mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 130W Type: N-channel N-channel, 40V, 120A, 3.2mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,7 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE40120A Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 120A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 4mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 130W Type: N-channel N-channel, 40V, 120A, 3.2mΩ@10V

SE40120A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)40V
Continuous drain current (Id) at 25°C120A
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance4mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)130W
typeN channel

SE40120A Preview

Download Datasheet
SE40120A
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low
On-Resistance Fully Characterized Avalanche
FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
Voltage and Current Improved Shoot-Through
V
DS
= 40V
R
DS(ON)
= 3.2mΩ @ V
GS
=10V
Pin configurations
See Diagram below
G
TO-220
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
dv/dt
@TA=25℃
P
D
T
J
Rating
40
±20
120
330
1080
5
130
-55 to 150
Units
V
V
A
mJ
V/ns
W
Single Pulse Avalanche Energy
Peak Diode Recovery
Total Power Dissipation
Operating Junction Temperature Range
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Junction to Case
Junction to Ambient (t≦10s)
TO-220
0.6
60
Units
℃/W
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
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