SE3301 datasheet, PDF - EEWORLD Datasheet

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SE3301: DescriptionMOS tube field effect tube 30V P channel; CategoryDiscrete semiconductor; File Size498KB，7 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE3301 Overview

MOS tube field effect tube 30V P channel

Features

Product Name: MOS Field Effect Tube 30V P Channel

Product model: SE3301

Product Description:

The MOSFETs from SINO-IC provide the best combination of fast switching, low on-resistance and cost-effectiveness

Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM

Simple Drive Requirement

Small Package Outline

Surface Mount Device

Pb-Free package is available.

product features:

For a single mosfet

VDS = -30 V

RDS(ON) = 80mΩ@ VGS=-10V @Ids=-3.9A

RDS(ON) = 135mΩ@ VGS=-3.0V @Ids=-3.0A

Package: SOT-23

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SHANGHAI

MICROELECTRONICS CO., LTD.

July 2008

SE3301

30V P-Channel Enhancement-Mode MOSFET

Revision:B

General Description

The MOSFETs from SINO-IC provide

the best combination of fast switching, low

on-resistance and cost-effectiveness.

General Description

Thigh Density Cell Design For Ultra Low

On-Resistance Fully Characterized Avalanche

Voltage and Current Improved Shoot-Through

FOM

Simple Drive Requirement

Small Package Outline

Surface Mount Device

Pb-Free package is available

Features

For a single mosfet

= -30 V

DS(ON)

= 80mΩ @ V

=-10V @Ids=-3.9A

DS(ON)

= 135mΩ @ V

=-3.0V @Ids=-3.0A

Pin configurations

See Diagram below

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

Rating

-30

±20

-3.9

-20

1.25

0.8

-55 to 150

°C

Units

Drain Current (Note 1)

Total Power Dissipation

Continuous

Pulsed

=25°C

=75°C

Operating Junction Temperature Range

ShangHai Sino-IC Microelectronics Co., Ltd.

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