SE3082G datasheet, PDF - EEWORLD Datasheet

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SE3082G: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 7.5mΩ @ 25A, 10V Maximum power dissipation (Ta =25°C): 3.1W Type: Dual N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size591KB，6 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE3082G Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 7.5mΩ @ 25A, 10V Maximum power dissipation (Ta =25°C): 3.1W Type: Dual N-channel

SE3082G Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	80A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	7.5mΩ @ 25A,10V
Maximum power dissipation (Ta=25°C)	3.1W
type	Dual N-channel

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SE3082G

N-Channel Enhancement-Mode MOSFET

Revision: A

General Description

Thigh Density Cell Design For Ultra Low

On-Resistance Fully Characterized Avalanche

Voltage and Current Improved Shoot-Through

FOM



Simple Drive Requirement

Small Package Outline

Surface Mount Device

Features

For a single MOSFET



= 30V

DS(ON)

= 5.0mΩ @ V

=10V

Pin configurations

See Diagram below

D2 S1D2

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation

Continuous

Pulsed

@TA=25℃

Symbol

Rating

±20

170

3.1

-55 to 150

Units

℃

Operating Junction Temperature Range

Thermal Resistance

Symbol

θJC

θJA

Parameter

Junction to Case

Junction to Ambient

Typ

Max

Units

℃/W

ShangHai Sino-IC Microelectronic Co., Ltd.

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