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SE2N7002D

Description
MOS tube field effect tube 60V 300mA N channel
CategoryDiscrete semiconductor   
File Size323KB,5 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE2N7002D Overview

MOS tube field effect tube 60V 300mA N channel

Features

Product name: MOS field effect tube 60V 300mA N channel


Product model: SE2N7002D


Product Description:


The MOSFETs from SINO-IC provide the best combination of fast switching, low on-resistance and cost-effectiveness.


product features:


VDS (V) = 60V


ID =300mA


RDS(ON) < 2Ω (VGS = 10V, ID=0.5A)


RDS(ON) < 3Ω (VGS = 5V, ID=0.05A)



Package: SOT-363


SE2N7002D Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
July 2008
SE2N7002D
60V,300mA N-Channel MOSFET
Revision:A
General Description
The MOSFETs from SINO-IC provide
the best combination of fast switching, low
on-resistance and cost-effectiveness.
Features
V
DS (V)
= 60V
I
D
= 300mA
R
DS(ON)
< 2Ω (V
GS
= 10V,I
D
=0.5A)
R
DS(ON)
< 3Ω (V
GS
= 5V,I
D
=0.05A)
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation
Operating Junction Temperature Range
Continuous
Pulsed
P
D
T
J
Symbol
V
DS
V
GS
I
D
Rating
60
±20
300
800
350
-55 to 150
mW
°C
Units
V
V
mA
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
t
5s
Symbol
R
θ
JA
Typ
357
Max
-
Units
°C/W
ShangHai Sino-IC Microelectronics Co., Ltd.
1.

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