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SE2315

Description
MOS tube field effect tube 20V P channel
CategoryDiscrete semiconductor   
File Size300KB,6 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
Download Datasheet View All

SE2315 Overview

MOS tube field effect tube 20V P channel

Features

Product Name: MOS Field Effect Tube 20V P Channel


Product model: SE2315


Product Description:


The MOSFETs from SINO-IC provide the best combination of fast switching, low on-resistance and cost-effectiveness



product features:


RDS(ON) ≦50mΩ@VGS=-4.5V


RDS(ON) ≦65mΩ@VGS=-2.5V


RDS(ON) ≦75mΩ@VGS=-1.8V


ESD rating : 2000V HBM



Applications:


Power Management in Note book


Portable Equipment


Battery Powered System


DC/DC Converter



Construction:


Silicon epitaxial planer



Package: SOT-23


SE2315 Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
July 2009
SE2315
P-Channel 20-V (D-S) MOSFET
General Description
The MOSFETs from SINO-IC provide the best combination
of fast switching, low on-resistance and cost-effectiveness
Features
RDS(ON)
≦50mΩ@VGS=-4.5V
RDS(ON)
≦65mΩ@VGS=-2.5V
RDS(ON)
≦75mΩ@VGS=-1.8V
ESD rating : 2000V HBM
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Pin configurations
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
I
DM
Symbol
V
DSS
V
GSS
I
D
Limit
-20
±8
-4.0
-3.5
-20
A
Units
V
V
A
ShangHai Sino-IC Microelectronics Co., Ltd.
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