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SE2305-A

Description
MOS tube field effect tube-20V P channel
CategoryDiscrete semiconductor   
File Size352KB,4 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE2305-A Overview

MOS tube field effect tube-20V P channel

Features

Product Name: MOS Field Effect Transistor -20V P Channel


Product model: SE2305-A


Product Description:


SE2305-A is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount


product features:


VDS= -20V


RDS(on)= 50mΩ @VGS= -4.5V,ID = -4.2A


RDS(on)= 70mΩ@VGS= -2.5V,ID = -3A


RDS(on)= 105mΩ@VGS= -1.8V,ID = -1A



Applications:


Load Switch


A Switch and Battery Switch for Portable Devices



Package: SOT-23


SE2305-A Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
July 2005
SE2305-A
-20V P-Channel Enhancement-Mode MOSFET
Revision:B
General Description
SE2305-A is produced with high cell
density DMOS trench technology, which is
especially used to minimize on-state
resistance. This device particularly suits low
voltage applications such as portable
equipment, power management and other
battery powered circuits, and low in-line power
dissipation are needed in a very small outline
surface mount
.
Features
V
DS
= -20V
R
DS(on)
= 50mΩ @V
GS
= -4.5V,I
D
= -4.2A
R
DS(on)
= 70mΩ@V
GS
= -2.5V,I
D
= -3A
R
DS(on)
= 105mΩ@V
GS
= -1.8V,I
D
= -1A
Application
Load Switch
A Switch and Battery Switch for Portable Devices
Pin configurations(
SOT23
)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation
25°C
Pulsed Drain Current
@TA=25°C
@TA=75°C
Operating Junction Temperature Range
T
J
P
D
Symbol
V
DS
V
GS
I
D
Rating
-20
±12
-4.7
-20
1.1
0.7
-55 to 150
°C
W
Units
V
V
A
ShangHai Sino-IC Microelectronics Co., Ltd.
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