SE100P60A datasheet, PDF - EEWORLD Datasheet

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SE100P60A: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 60A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 25mΩ @ 60A, 10V Maximum power dissipation (Ta= 25°C): 188W Type: P-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size359KB，7 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE100P60A Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 60A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 25mΩ @ 60A, 10V Maximum power dissipation (Ta= 25°C): 188W Type: P-channel

SE100P60A Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	60A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	25mΩ @ 60A,10V
Maximum power dissipation (Ta=25°C)	188W
type	P channel

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