SDM1645CS datasheet, PDF - EEWORLD Datasheet

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SDM1645CS: DescriptionProductStatus:Active, VRRM Max.(A):45, IF(A):16, IFSM(V):120, VF Max.(A):0.54, @IF(µA):8, IR Max.(V):210, @VR:45, Package:TO-252; CategoryDiscrete semiconductor diode; File Size136KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SDM1645CS Overview

ProductStatus:Active, VRRM Max.(A):45, IF(A):16, IFSM(V):120, VF Max.(A):0.54, @IF(µA):8, IR Max.(V):210, @VR:45, Package:TO-252

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SDM1645CS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

45 Volt

16 Ampere

VOLTAGE

CURRENT

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• For surface mounted applications in order to optimize board space

• Low power loss, High efficiency

• High surge capacity

• For use in low voltage high frequency inverters, free wheeling, and

polarity protection applications

• Lead free in compliance with EU RoHS 2011/65/EU directive

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MECHANCAL DATA

• Case: TO-252 molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026

• Polarity: As marking

• Weight: 0.0104 ounces, 0.297 grams.

MAXIMUM RATINGS(T

=25

C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum rms voltage

Maximum dc blocking voltage

Maximum average forward rectified current

Peak forward surge current : 8.3ms single half

sine-wave superimposed on rated load

Typical thermal resistance per diode

Operating junction temperature range

Storage temperature range

per device

per diode

( No te 1 )

SYMBOL

RRM

RMS

F(AV)

FSM

JC

STG

VALUE

120

-55 to + 150

UNIT

C /W

NOTE : 1.Mounted on 10cm x 10cm x 0.5mm copper pad area

ELECTRICAL CHARACTERISTICS(T

=25

C unless otherwise noted)

PARAMETER

Breakdown voltage per diode

SYMBOL

TEST CONDITIONS

=0.5mA

=1A

=5A

=8A

=1A

=5A

=36V

Reverse current per diode

=45V

=25 C

=125

=25

=125

MIN.

TYP.

0.32

0.43

0.49

0.22

0.39

MAX.

0.54

210

UNIT

A

Instantaneous forward voltage per

diode

January 17,2014-REV.00

PAGE . 1

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