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SBT10150LCT_TO_10001

Description
DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 10A Forward voltage drop (Vf): 860mV @ 5A 150V, 10A, VF=0.86V@5A
CategoryDiscrete semiconductor    Schottky diode   
File Size120KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBT10150LCT_TO_10001 Overview

DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 10A Forward voltage drop (Vf): 860mV @ 5A 150V, 10A, VF=0.86V@5A

SBT10150LCT_TO_10001 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)150V
Average rectified current (Io)10A
Forward voltage drop (Vf)860mV @ 5A

SBT10150LCT_TO_10001 Preview

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SBT10150LCT
ULTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra low forward voltage drop, low power loss
• High efficiency operation
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
150 Volt
CURRENT
10 Ampere
MECHANICAL DATA
• Case : TO-220AB, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Weight: 0.067 ounces, 1.89 grams.
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half sine-wave
superimposed on rated load
Typical thermal resistance
Operating junction temperature range
Storage temperature range
(Note 1)
per device
per diode
SYMBOL
V
RRM
V
RMS
V
R
I
I
F(AV)
VALUE
150
105
150
10
5
80
2
-55 to + 150
-55 to + 150
UNIT
V
V
V
A
A
O
FSM
R
ΘJC
T
J
T
STG
C/ W
o
C
C
o
Note : 1. Device mounted on a infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=1A
I
F
=3A
I
F
=5A
I
F
=1A
I
F
=3A
V
R
=120V
Reverse current per diode
I
R
MIN.
150
-
-
-
-
-
-
-
-
TYP.
-
0.64
0.75
0.81
0.51
0.61
1
-
1.5
MAX.
-
-
-
0.86
-
-
-
40
-
UNIT
V
V
V
μA
μA
mA
T
J
=25
o
C
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=25
o
C
T
J
=125
o
C
Instantaneous forward voltage per diode
V
F
V
R
=150V
November 2,2016-REV.01
PAGE . 1
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