SILICON /GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS silicon / glass passivated three-phase bridge rectifier
Features
Product Name: SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS Silicon / Glass Passivated Three-Phase Bridge Rectifier
Product model: SBR25005
product features:
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
Mechanical data:
Case: Epoxy Case with Heat Sink Interally
Mounted in the Bridge Encapsulation
Terminals:Plated Leads Solderable per
MIL-STD_202.Method 208
Polarity: As Marked on Body
Weight:20 grams (apprex.)
Mounting Position:
Bolt Down on Heatsink With Silicone Thermal
Compound Between Bridge and Mouting Surface
For Maximun Heat Transfer Efficiency
Mounting Torque:20 in Ibs.Max.
Marking:Type Number
Maximum Ratings and Electrical Characteristics:
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
product data:
Peak Repetitive Reverse Voltage VRRM Maximum reverse peak voltage: 50V
Working Peak Reverse Voltage VRWM Working Peak Reverse Voltage: 50V
DC Blocking Voltage VR DC blocking voltage: 50V
Peak Non-Repetitive Reverse Voltage VRSM Peak reverse voltage: 75v
RMS Reverse Voltage VR(RMS) Reverse voltage effective value: 35V
Maximum Average Forward Rectified Current @TC = 100℃ I(AV) Maximum forward current: 25 A
Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current:
(No Voltage Reapplid t=8.3ms at 60Hz) IFSM :375 A
(No Voltage Reapplid t=10ms at 50Hz) IFSM :360 A
(100% Reapplid t=8.3ms at 60Hz) IFSM :314A
(100% Reapplid t=10ms at 50Hz) IFSM :300 A
(I^2)t Rating for fusing
(No Voltage Reapplid t=8.3ms at 60Hz) (I^2)t :580 (A^2)S
(No Voltage Reapplid t=10ms at 50Hz) (I^2)t :635 (A^2)S
(100% Reapplid t=8.3ms at 60Hz) (I^2)t :410 (A^2)S
(100% Reapplid t=10ms at 50Hz) (I^2)t :450(A^2)S
Forward Voltage (per element) @ TJ=25℃,@IFM=40Apk per single junction VF :1.2V
Peak Reverse Current (per leg) @ TJ=25℃ IR Maximum reverse leakage current: 10μA
At Rated DC Blocking Voltage @ TJ = 125℃ IR Maximum Reverse Leakage Current: 5.0mA
RMS Isolation Voltage from Case to Lead VISO :2500V
Operating Temperature Range TJ Operating Junction Temperature: -40 to +125 ℃
Storage Temperature Range TSTG Storage Temperature Range: -40 to +150 ℃
Thermal Resistance Junction to Case at DC Operation per Bridge RθJC Thermal resistance coefficient: 1.42K/W
Thermal Resistance Case to Heatsink Mounting Surface,Smooth,Flat and Greased RθCS :0.2K/W
Package: SKBPC
Parameter Name | Attribute value |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Configuration | BRIDGE, 4 ELEMENTS |
Diode type | BRIDGE RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.26 V |
Maximum non-repetitive peak forward current | 375 A |
Number of components | 4 |
Maximum operating temperature | 150 °C |
Maximum output current | 25 A |
Maximum repetitive peak reverse voltage | 50 V |
surface mount | NO |
Base Number Matches | 1 |
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