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SBM560VSS_AY_00001

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, DO-201AD,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBM560VSS_AY_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, DO-201AD,

SBM560VSS_AY_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.52 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current120 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage60 V
Maximum reverse current220 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL

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SBM560VSS
ULTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra low forward voltage drop, low power losses
• High efficiency operation
• Lead free in comply with EU RoHS 2011/65/EU directives
0.375(9.5)
0.285(7.2)
60 Volts
CURRENT
5 Amperes
1.0(25.4)MIN.
0.052(1.3)
0.048(1.2)
MECHANICAL DATA
Case : Molded plastic, DO-201AD
Terminals : Axial leads,solderable per MIL-STD-750, Method 2026
Polarity : Color band denotes cathode end
Approx weight : 0.0402 ounces, 1.142 grams
1
2
Cathode
Anode
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half sine-wave
superimposed on rated load
Typical thermal resistance
Operating junction temperature range
Storage temperature range
(Note 1)
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
R
JA
R
JL
T
J
T
STG
VALUE
60
42
60
5
120
45
25
-55 to + 150
-55 to + 150
O
1.0(25.4)MIN.
0.210(5.3)
0.188(4.8)
UNIT
V
V
V
A
A
C /W
o
C
C
o
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=1A
I
F
=3A
I
F
=5A
I
F
=1A
I
F
=3A
V
R
=48V
Reverse current
I
R
V
R
=60V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25 C
T
J
=125
o
C
o
MIN.
60
-
-
-
-
-
-
-
-
TYP.
-
0.33
0.4
0.46
0.24
0.36
25
-
8.5
MAX.
-
-
-
0.52
-
-
-
220
-
UNIT
V
V
V
A
A
mA
Instantaneous forward voltage
V
F
Note : 1.The testing condition of the thermal resistance (junction to ambient and junction to lead) is based on
10mm lead length between two 10x10cm copper pad heatsinks.
October 29,2013-REV.00
PAGE . 1
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