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SBM2045VFCT_T0_10001

Description
UlTRA LOW VF SCHOTTKY RECTIFIER
File Size75KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBM2045VFCT_T0_10001 Overview

UlTRA LOW VF SCHOTTKY RECTIFIER

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SBM2045VFCT
UlTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra Low forward voltage drop, low power losses
• High efficiency operation
0.606(15.4)
0.583(14.8)
45 Volts
CURRENT
20 Amperes
0.112(2.85)
0.100(2.55)
0.272(6.9)
0.248(6.3)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.056 ounces, 1.6 grams.
0.177(4.5)
0.137(3.5)
Case : ITO-220AB, Plastic
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical junction capacitance (V
R
=4V, f=1MHz)
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
(Note 1)
per diode
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
C
J
R
JC
T
J
T
STG
VALUE
45
20
10
280
860
15
-55 to + 150
-55 to + 150
o
UNIT
V
A
A
pF
C/W
o
C
C
o
Note : 1. Mounted on infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=1A
I
F
=5A
I
F
=10A
I
F
=1A
I
F
=5A
I
F
=10A
V
R
=36V
Reverse current per diode
I
R
V
R
=45V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
MIN.
45
-
-
-
-
-
-
-
-
-
TYP.
-
0.28
0.36
0.41
0.18
0.28
0.36
100
-
35
MAX.
-
-
-
0.45
-
-
-
-
320
-
UNIT
V
V
Instantaneous forward voltage per diode
V
F
T
J
=125
o
C
V
A
A
mA
June 6,2013-REV.00
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