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SBM1660VCT

Description
ProductStatus:Active, VRRM Max.(A):60, IF(A):16, IFSM(V):150, VF Max.(A):0.55, @IF(µA):8, IR Max.(V):220, @VR:60, Package:TO-220AB
CategoryDiscrete semiconductor    diode   
File Size108KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBM1660VCT Overview

ProductStatus:Active, VRRM Max.(A):60, IF(A):16, IFSM(V):150, VF Max.(A):0.55, @IF(µA):8, IR Max.(V):220, @VR:60, Package:TO-220AB

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SBM1660VCT
UlTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra Low forward voltage drop, low power losses
• High efficiency operation
• Lead free in comply with EU RoHS 2011/65/EU directives
60 Volts
CURRENT
16 Amperes
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.065 ounces, 1.859 grams.
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
per diode
per device
per diode
(Note 1)
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
JC
T
J
T
STG
VALUE
60
8
16
150
3
-55 to + 150
-55 to + 150
UNIT
V
A
A
o
C/W
o
C
C
o
Note : 1. Mounted on infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=1A
I
F
=5A
I
F
=8A
I
F
=1A
I
F
=5A
I
F
=8A
V
R
=42V
Reverse current per diode
I
R
V
R
=60V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
MIN.
60
-
-
-
-
-
-
-
-
-
TYP.
-
0.3
0.42
0.49
0.22
0.4
0.49
40
-
18
MAX.
-
-
-
0.55
-
-
-
-
220
-
UNIT
V
V
Instantaneous forward voltage per diode
V
F
T
J
=125
o
C
V
A
A
mA
June 26,2013-REV.00
PAGE . 1
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