SBD20C100D datasheet, PDF - EEWORLD Datasheet

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SBD20C100D: DescriptionSchottky Diode (SBD); CategoryDiscrete semiconductor; File Size490KB，7 Pages; ManufacturerSilan; Websitehttp://www.silanic.com.cn/; Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.

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SBD20C100D Overview

Schottky Diode (SBD)

Parameters

VRRM[V]：100

IFAV[A]：20

IFSM[A]：150

VF.Max[V]：0.85

IR.Max[μA]：50

Package：TO-252-2L

SBD20C100D Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	100V
Average rectified current (Io)	20A
Forward voltage drop (Vf)	850mV @ 10A

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SBD20C100T/F/S/D

说明书

20A、100V肖特基整流管

描述

SBD20C100T/F/S/D

是采用硅外延工艺制½而成的肖特基整流二极管，

广泛应用于开关电源、保护电路等各类电子线路中。

特点



具有过压保护的保护环结构

高电流冲击½力

½功耗，高效率

正向压降½

产品规格分类

产品名称

SBD20C100T

SBD20C100F

SBD20C100S

SBD20C100STR

SBD20C100DTR

封装½式

TO-220-3L

TO-220HW-3L

TO-220F-3L

TO-263-2L

TO-252-2L

打印名称

SBD20C100T

SBD20C100F

20C100S

SBD20C100D

环保等级

无铅

无卤

包装

料管

编带

极限参数(除非特殊说明，T

=25C)

参

最大反向峰值电压

正向平均整流电流

正向峰值浪涌电流@8.3ms

工½结温范围（注

1）

存储温度范围

注

1：

dPtot



dTj

Rth(j



数

符号

RRM

FAV

FSM

STG

额定值

100

150

-55~150

单 ½

C

避免器件热失控的½用条件。

热阻特性

参数名称

芯片对管壳热阻(TO-220-3L\TO-220HW-3L)

符号

θJC

额定值

2.0

单½

C/W

杭州士兰微电子股½有限公司

http: //www.silan.com.cn

版本号：2.4

共

页第

页

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