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SB850F_00001

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB850F_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

SB850F_00001 Parametric

Parameter NameAttribute value
package instructionITO-220AC, 3/2 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage50 V
Maximum reverse current200 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1

SB850F_00001 Preview

Download Datasheet
SB820F SERIES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
0.112(2.85)
0.100(2.55)
20 to 60 Volts
CURRENT
8 Amperes
0.272(6.9)
0.248(6.3)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage, high frequency inverters
free wheeling, and polarlity protection applications.
• Lead free in comply with EU RoHS 2011/65/EU directives
0.063(1.6)MAX.
0.606(15.4)
0.583(14.8)
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
MECHANICAL DATA
• Case: ITO-220AC full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Weight: 0.0655 ounces, 1.859 grams.
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
Ma xi m um Re c urre nt P e a k Re ve r s e Vo lt a g e
Ma xi m um RM S Vo lt a g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve ra g e F o r wa rd C urr e nt a t T
C
= 7 5
O
C
P e a k F o r wa rd S urg e C urr e nt : 8 . 3 m s s i ng le
ha lf s i ne -wa ve s up e ri m p o s e d o n ra t e d lo a d
(J E D E C me t ho d )
Ma xi m um F o rwa r d Vo lt a g e a t 8 A
Ma xi m um D C Re ve rs e C urr e nt
a t Ra te d D C B lo c k i ng Vo lta g e
Typ i c a l The rm a l Re s i s t a nc e
Op e r a ti ng J unc ti o n Te m p e ra t ure Ra ng e
S to r a g e Te mp e r a tur e Ra ng e
T
J
= 2 5
O
C
T
J
= 1 0 0
O
C
S YM B OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
J
C
T
J
T
S TG
SB820F SB830F SB840F SB845F SB850F SB860F
20
14
20
30
21
30
40
28
40
8
45
3 1 .5
45
50
35
50
60
42
60
UNITS
V
V
V
A
150
A
0 .5 5
0 .2
50
3
-5 5 to + 1 2 5
-5 5 to +1 5 0
-5 5 to + 1 5 0
0 .7 5
V
mA
O
C / W
O
C
C
O
NOTE:
Both Bonding and Chip structure are available.
January 24,2013-REV.04
PAGE . 1
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