SB840DT/R13 datasheet, PDF - EEWORLD Datasheet

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SB840DT/R13: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB840DT/R13 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3

SB840DT/R13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	D2PAK
package instruction	ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
Contacts	4
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	40 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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SB820D SERIES

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forward voltage, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

0.110(2.8)

0.236(6.0)

0.197(5.0)

0.026(0.7)

0.011(0.3)

0.055(1.4)

0.039(1.0)

0.108(2.75)

0.092(2.35)

0.35(0.9)MAX.

0.357(9.1)

0.335(8.5)

20 to 60 Volts

CURRENT

8 Amperes

0.409(10.4)

0.387(9.80)

0.189(4.8)

0.137(4.4)

0.055(1.4)

0.047(1.2)

0.418(10.6)

0.378(9.60)

MECHANICAL DATA

• Case: TO-263 / D

PAK molded plastic package

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.06 ounces, 1.7 grams.

0.108(2.75)

0.092(2.35)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Ma xi m um Re c urr e nt P e a k Re ve r s e Vo lt a g e

Ma xi m um RM S Vo lta g e

Ma xi m um D C B lo c k i ng Vo lta g e

Ma xi m um A ve ra g e F o r wa rd C urre nt a t

Tc = 7 5

P e a k F o r wa rd S urg e C urr e nt :8 .3 ms s i ng le ha lf s i ne -

wa ve s up e ri m p o s e d o n r a te d lo a d (J E D E C me tho d )

Ma xi m um F o rwa r d Vo lta g e a t 8 .0 A

Ma xi m um D C R e ve rs e C ur re nt a t Ra te d

D C B lo c k i ng Vo lta g e

Typ i c a l The rm a l Re s i s ta nc e

Op e r a ti ng J unc ti o n Te m p e ra ture Ra ng e

S to ra g e Te m p e ra tur e Ra ng e

= 2 5

= 1 0 0

S YMB OL

RRM

RMS

F (AV )

F S M

J

S TG

- 5 5 to + 1 2 5

0 .5 5

0 .2

-5 5 to + 1 5 0

- 5 5 to + 1 5 0

SB820D SB830D SB840D SB850D SB860D

150

0 .7 5

UNITS

C / W

NOTE:

Both Bonding and Chip structure are available.

August 19,2010-REV.02

PAGE . 1

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